Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface

ABSTRACT

A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.

This is a division of application Ser. No. 09/371,845, filed Aug. 11,1999 which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a heat treatment technique used in thefield of semiconductor devices and particularly to a heat treatmentmethod and a heat treatment apparatus for controlling the temperature ofa substrate surface.

In recent years, as high integration of semiconductor devices hasprogressed, patterns have been miniaturized and preciseness thereof hasbeen improved. In steps of manufacturing a photomask used for patternexposure, a means for subjecting a photosensitive material to a heattreatment is necessary for the step of forming a pattern. In the processincluding the step of heating or cooling substrates to be exposed,variants of the treatment temperature are reflected on variants of thepattern size. Therefore, more precise management of the temperature hasbeen demanded in accordance with miniaturization and improvement of thepreciseness.

Conventionally, a thermocouple or a resistance bulb is embedded near thesurface of a heating plate used for a heating treatment to measure thetemperature, when managing the temperature of a substrate. Further, theoutput of a heating mechanism is controlled based on the obtainedtemperature, and a heat treatment is performed. However, since quartzforming the under layer of the substrate to be exposed has a very lowthermal diffusivity, temperature of the photosensitive material film onthe surface of the substrate to be processed cannot be accuratelycontrolled by the method described above.

To perform precise temperature control with user of a quartz substrateused for a substrate to be exposed, it is necessary to measure directlythe temperature of the film as a target to be subjected to a heattreatment on the substrate. Means for measuring the surface temperatureare roughly divided into two types, one being a contact type and theother being a non-contact type, depending on the characteristics of amonitoring method.

As the contact type, there is a method of measuring the surfacetemperature by embedding a thermocouple into a film as a target on thesubstrate. However, it is not a realistic way to embed thermocouplesinto all substrates to be processed. Also, a photomask manufactured andprocessed by embedding directly a thermocouple in the substrate to beprocessed is not suitable for practical use. By attaching a thermocoupleor a resistance member, the temperature characteristic is changed.Therefore, there is a problem that the photosensitive material film as atarget to be heated cannot be accurately measured. In particular, it isimpossible to embed a temperature sensor into a photosensitive materialfilm having a film thickness of about 0.1 to 2 μm called a resist.

From the reasons described above, it is preferable to use thetemperature measuring method of the non-contact type. A radiationthermometer is a representative example of the temperature measuringdevice of this type. There is an example using the radiation thermometerwhich has succeeded in measurement of a surface temperature of a steelmaterial having a precise oxide film processed by a shape steel line orthe like.

However, the temperature measurement of a substrate to be processed orthe like with use of the radiation thermometer involves the followingproblems. In this measurement, since the temperature of the temperaturemeasurement area is as low as about 50 to 200° C., the signal is weak.Therefore, if other radiated light than that from the target to bemeasured enters into the sensor section, a measurement error is caused.In addition, it is not possible to neglect a measurement error due todrifting of the sensitivity which is considered as depending on theenvironmental temperature and the like. From the reasons describedabove, the radiation thermometer involves a problem that accuratetemperature measurement is difficult.

In addition, to obtain more precise patterns, it is highly necessary touse a step of measuring the temperature of the substrate surface withhigh preciseness and of performing heating (or cooling) based on themeasurement result. Therefore, demands for a method and an apparatus, bywhich temperature measurement is carried out while monitoring thesurface temperature of a substrate (in-situ) and feedback is immediatelyreflected on a heat control section or the like, have become more andmore serious.

BRIEF SUMMARY OF THE INVENTION

The present invention has been made in view of the above-describedsituation, and has an object of providing a heat treatment method and aheat treatment apparatus, by which the surface temperature of asubstrate to be processed such as a substrate for exposure can bemeasured with high preciseness so that accurate temperature managementof a thin film formed on the substrate can be achieved.

To achieve the above object, the present invention according to a firstaspect thereof has the structure as follows. A heat treatment method ischaracterized by comprising steps of: measuring a temperature of a thinfilm formed on a substrate to be processed, by a radiation thermometerwhich performs measurement with use of a wavelength range except for awavelength range of light which is transmitted through the thin film;and controlling a heated temperature of the thin film in response to thetemperature measured by the step.

Also, to achieve the above object, the present invention according tothe second aspect thereof has the structure as follows. A heat treatmentapparatus is characterized by comprising: a support member forsupporting a substrate to be processed, an which a thin film is formed;a heating section for heating the thin film; a radiation thermometer formeasuring a surface temperature of the thin film; and a control sectionfor controlling a temperature which is heated by the heating section, inresponse to the temperature measured by the radiation thermometer.

Also, to achieve the above object, the present invention according to athird aspect thereof further comprises, before the step of measuring thetemperature of the thin film, steps of: measuring a surface temperatureof a reference sample which is made of same material as the substrateand is set at a target temperature, by the radiation thermometer; andcorrecting a measurement value of the radiation thermometer, based ontemperature data obtained by the step of measuring the temperature ofthe reference sample.

Also, to achieve to the above object, the present invention according toa fourth aspect thereof has a structure as follows. The heat treatmentapparatus described above further comprises: a reference sample which ismade of same material as the substrate and is set at a targettemperature; and a correcting section for measuring a surfacetemperature of the reference sample, and for correcting a measurementvalue of the radiation thermometer, based on temperature data obtainedby measurement of the surface temperature of the reference sample.

Preferred embodiments of the present invention will be as follows, forexample.

(1) The substrate to be processed is a photomask blank in which a thinfilm containing metal made of chrome (Cr) or the like is formed on atransparent substrate made of quartz or the like, and a photosensitivethin film made of a chemical amplification type resist or the like isformed thereon.

(2) There is provided a blackbody for cutting stray light which entersinto the radiation thermometer through the surface of the substrate.

(3) The blackbody is provided at a position optically symmetrical to theradiation thermometer with respect to a surface of the thin film, andthe blackbody is set at a predetermined temperature.

(4) The radiation thermometer is an infrared sensor.

(5) The radiation thermometer makes measurement with use of light of awavelength range except for light of a wavelength range which isradiated to the radiation thermometer from the substrate.

(6) The wavelength range of the light measured by the radiationthermometer is set to either a range of 2.7 to 2.8 μm or a range from4.3 μm. Furthermore, the wavelength range of the light is desirably setto 9 μm or more.

(7) The heating section is a halogen lamp or a hot plate. The heatingsection is provided in a side of a surface of the substrate which isopposite to another surface of the substrate where the thin film isformed, and applies energy to the substrate to be processed.

(8) A straightening plate, which controls the flow of a gas above thesubstrate and transmits the light of the wavelength range whosetemperature is monitored, is provided above the substrate to beprocessed. The straightening plate is movable in the vertical direction,the lateral direction, and the height direction.

(9) The straightening plate exists on a light passage between theblackbody and the radiation thermometer and has a plurality of holes inthe direction along the light passage.

(10) To approximate the temperature of the photosensitive thin film to apreviously aimed temperature, an energy value required for heating orcooling is calculated from the measured temperature, and the energyvalue thus obtained is transmitted as a power for the heating or coolingmeans.

(11) When the processing amount calculated from the measured temperatureand the heating processing time reaches a preset value, heating isstopped.

(12) After the energy for heating the substrate during measurement isshut off, the temperature is measured with use of the radiationthermometer. Correction of adding an offset or the like is made to theobtained temperature data, thereby to calculate the temperature.

(13) Modulation with a lower frequency than the response speed of thetemperature measurement system is effected on the energy for heating thesubstrate to be processed.

(14) The reference sample is a sample in which a thin film having aradiation rate substantially equal to the photosensitive thin film withrespect to the measurement wavelength of the radiation thermometer isformed on a substrate having the same material as the substrate to beprocessed.

(15) The reference sample has the completely same structure as thesubstrate to be processed.

(16) A resistance bulb or a thermocouple is embedded near the surface ofthe reference sample.

(17) The surface temperature of the reference sample is measured by theradiation thermometer or a resistance bulb, or a thermocouple, and thereis provided a correcting section for correcting the measurement value ofthe radiation thermometer, based on the temperature data obtained bythis measurement.

According to the structure described above, the present inventionprovides the following functions and advantages. The following resultwill be obtained in the case where a mask blank in which a thin filmcontaining metal of chrome or the like is formed on a transparentsubstrate of quartz or the like and a photosensitive thin film having athickness of about 500 nm is further formed thereon is used as asubstrate to be processed on which a photosensitive thin film (photoresist film) is formed. The infrared transmittance of the mask blank issubstantially zero within a range of 2.7 to 2.8 μm and within a range of4.3 μm or more. This is because the thin film containing metal existingon the mask blank substantially shields most of the light of thiswavelength range. Therefore, by setting the measurement wavelength ofthe radiation thermometer within a range of 2.7 to 2.8 μm or a range of4.3 μor more, the radiation thermometer does not detect radiation lightfrom a heating source existing in the side opposite to the thin filmcontaining metal with respect to the substrate. Accordingly, the surfacetemperature (temperature of the photo resist film) of the substrate tobe processed can be measured with high preciseness by the radiationthermometer.

Here, the photo resist film existing on the photomask blank has veryhigh flatness on the resist surface and therefore has a mirrorcharacteristic. Therefore, there is provided a mechanism (which is ablackbody having a constant temperature) for removing stray light in thedirection including a position of a mirror image symmetrical to theradiation thermometer with respect to the temperature measurementposition as a reference position. The radiation thermometer thereforereceives two radiation lights, i.e., radiation light from the surface(the photosensitive thin film and the thin film containing metal) of thesubstrate to be processed and radiation light which comes from the blackbody and is reflected on the surface of the substrate. By previouslymeasuring radiation rates of the black body and the photosensitive thinfilm on the substrate to be processed, it is possible to know theradiation amount which enters into the radiation thermometer from theblack body. Therefore, as for the radiation from the surface of thesubstrate, mixture of stray light can be efficiently prevented if theradiation amount which comes from the black body and is reflected on thesurface of the substrate is subtracted from the radiation amount whichis actually received by the radiation thermometer. As a result of this,the temperature of the photosensitive thin film can be measured withhigh preciseness by using the radiation thermometer.

Also, the measurement sensitivity of the radiation thermometer changesdepending an service conditions such as the environmental temperature orthe like. Before processing the substrate the radiation thermometer usedfor measurement is used to measure the temperature of a referencesample, and correction is made to the measurement value of the radiationthermometer. Temperature measurement is thereafter carried out.Measurement errors among respective substrates to be processed can bethereby eliminated substantially. As a result of this, dimensioncontrollability during PEB (Post Exposure Baking) is remarkablyimproved, and dimension errors among substrates to be processed can bereduced to be extremely small.

Also, if radiation based on lamp heating or the like is used as aheating means, the photo resist film can be heated without heating thequartz substrate as an under layer, within a particular wavelengthrange. In this manner, the processing time can be shortened. At thistime, with respect to the mask blank on which a photosensitive materialfilm is formed, the temperature measurement wavelength and thewavelength used for heating can be set to wavelengths different fromeach other, so that radiation required for heating does not becometemperature measurement noise. Further, since a short processing time isenough, it is possible to reduce greatly occurrence of a heatdistribution of the quartz substrate, and the uniformity in the plane ofthe substrate can be improved.

In addition, since heating is stopped when the processing amountcalculated from the measured temperature and the heating processing timereaches a preset value, the total energy amount supplied to thesubstrate to be processed can be controlled strictly within the maskplane or between samples, so that controlability of absolute dimensionscan be improved.

Also, in case where a radiation section is provided above the substrateto be processed with use of a lamp (radiation) as a heating means, it isconsidered that radiation noise may enter into the radiationthermometer. In this case, temperature measurement is carried out whenthe energy is OFF (or low), by shutting off the energy for heating thesubstrate or by modulating the energy with a lower frequency than theresponse speed of the temperature measurement system. In this manner,radiation noise can be greatly reduced by eliminating or reducingradiation caused due to heating only during temperature measurement.Accurate temperature measurement is enabled by making correction bysoftware, e.g., by adding an offset value to the obtained temperaturedata.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed outhereinafter.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently preferred embodiments ofthe invention, and together with the general description given above andthe detailed description of the preferred embodiments given below, serveto explain the principles of the invention.

FIG. 1A is a plan view showing a part of the structure of a heattreatment apparatus according to the first embodiment of the presentinvention.

FIG. 1B is a side view showing the structure of the heat treatmentapparatus.

FIG. 2 is a graph showing the transmittance characteristic of a maskblank according to the first embodiment, with respect to an infraredbeam.

FIG. 3 is a graph showing radiation rate characteristic of a quartzsubstrate forming the mask blank.

FIG. 4A is a graph showing the temperature history of the mask blankduring heating in the first embodiment.

FIG. 4B is a graph showing the temperature history of the mask blankduring cooling in the first embodiment.

FIG. 5A is a plan view showing representative position coordinates atwhich temperature measurement of the substrate surface is carried out.

FIG. 5B is a side view showing a layout example of a blackbody and aradiation thermometer with respect to the substrate.

FIG. 5C is a side view showing another layout example of a blackbody anda radiation thermometer with respect to the substrate.

FIG. 6 is a side view showing the structure of the heat treatmentapparatus according to the second embodiment of the present invention.

FIG. 7 is a graph showing the temperature history of a mask blank duringheating in the second embodiment.

FIG. 8 is a side view showing the structure of the heat treatmentapparatus according to the third embodiment of the present invention.

FIG. 9 is a graph showing the temperature history of a mask blank duringheating in the third embodiment.

FIG. 10A is a plan view showing a part of the structure of a heattreatment apparatus according to the fourth embodiment of the presentinvention.

FIG. 10B is a side view showing the structure of the heat treatmentapparatus according to the fourth embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following, details of the present invention will be explainedwith reference to the embodiment shown in the drawings. Experimentalmanufacture of a substrate to be exposed (photomask) used in a step ofmanufacturing a semiconductor device will be explained as an example.

[First Embodiment]

FIG. 1A is a plan view schematically showing the structure of a heattreatment apparatus according to a first embodiment of the presentinvention. FIG. 1B is a side view showing the structure of the heattreatment apparatus. Note that FIG. 1A shows a part of the heattreatment apparatus.

As shown in FIG. 1B, this heat treatment apparatus is provided with asample table 2, and a substrate 1 to be processed is set on the sampletable 2. The substrate 1 to be processed is, for example, prepared byforming a photosensitive thin film such as a photo resist film on achrome-mask blank of 6 inch size. The sample table 2 is divided into twoparts having a function as a heater, as shown in FIG. 1A, e.g., a heater2 a at the center part and a heater 2 b at the peripheral section. Theheat temperatures of these heaters 2 a and 2 b thus divided arecontrolled by a temperature control section 3 such that the temperatureof the photosensitive thin film on the substrate 1 to be processedbecomes close to a set value. The heat temperatures (output) of theheaters 2 a and 2 b can be independently controlled by the temperaturecontrol section 3. Note that the temperature control section 3 feedsback the temperature data concerning the photosensitive thin film on thesubstrate 1 by a PID system, to determine the powers applied to theheaters 2 a and 2 b. Also, the temperature control section 3 has afunction of calculating the energy amount from a substrate surfacetemperature and a heating period, and subsequently the reaction amountby PEB (Post Exposure Baking) of a chemical amplification type resist.

Above the substrate 1 to be processed, blackbodies 4 and radiationthermometers (infrared sensors) 5 are provided. Two blackbodies 4 andtwo radiation thermometers 5 are provided as shown in FIGS. 1A and 1B.The blackbodies 4 and the radiation thermometers 5 are provided with amovable stage (not shown) which can be adjusted in the directions of X,Y, Z, θ, and φ, and the measurement position can be freely selected.

The blackbodies 4 and the radiation thermometers 5 are provided atoptically symmetric positions with respect to the surface of thesubstrate 1 to be processed, i.e., the blackbodies 4 and the radiationthermometers 5 are arranged to be mirror-symmetrical to each other inrelation to a measurement position on the surface of the substrate 1 tobe processed. Further, the heat radiated from the blackbodies isreflected by the substrate 1 to be processed and enters into theradiation thermometers 5. Also, the temperature measured by theradiation thermometer 5 is transmitted to the temperature controlsection 3 and is displayed on an indicator 6.

The following will be the method of arranging the blackbodies 4 and theradiation thermometers 5 in a mirror-symmetrical positional relationshipwith respect to the measurement position on the surface of the substrate1 to be processed. A He-Ne laser and a photo-detector for alignment areattached to the folder or the like on which a blackbody 4 or a radiationthermometer 5 is fixed. Optical alignment is then carried out such thatthe measurement sensitivity is maximized at the position where thesensor output is maximized. Further, mirrors may be respectivelyprovided to be adjacent to the laser and the photo-detector such thatalignment light passes through the same light passage as the lightpassage for temperature measurement.

The chrome mask blank as the substrate 1 to be processed is brought intocontact with and is separated from the heaters 2 a and 2 b, as pins 7supporting the substrate 1 are elevated up and down. A straighteningplate 9 is provided between the substrate 1 to be processed and theblackbodies 4 and the radiation thermometers 5. This straightening plate9 is provided in order to prevent the atmosphere on the surface of thegubstrate 1 from being disturbed. By eliminating this turbulent flow ofthe atmosphere, the temperature of the photosensitive thin film formedon the substrate 1 is prevented from being changed. A hole of 10 mmφ isformed in the light axis direction in the straightening plate 9 so asnot to prevent the light passage which infrared light passes, as shownin FIG. 1B. The straightening plate 9 can be driven in all directions ofX, Y, and Z.

A transfer arm 8 serves to transfer the substrate 1 to be processed. Bythis transfer arm 8, the substrate 1 on the sample table 2 is conveyedonto the cooling plate 12 made of aluminum (Al). A drive control section10 controls driving of the straightening plate 9, Z-direction driving ofthe heaters 2 a and 2 b, and driving of the transfer arm 8. Atemperature adjustment unit 11 comprises a mechanism for spraying atemperature-adjusted gas (e.g., nitrogen or the like) onto the substrate1 to be processed on the cooling plate 12. Note that the broken line 13denoted at 13 in FIG. 1B is an outer frame of the apparatus. This outerframe 13 isolates the measurement system from outer turbulence so thatturbulence or the like might not be caused in the flow of theatmosphere, to enable more precise temperature measurement.

Next, a heat treatment method using the heat treatment apparatus will beexplained.

At first, a positive chemical amplification resist (having a photoresist film thickness of 500 nm) is applied onto a quarts substrate(mask blank) with a chrome film which has a diameter of 6 inches and athickness of 0.25 inches (according to the standard 6025). Further, thismask is exposed with light by an electronic beam drawing device (50 keV,8 μC/cm²). A mask blank 1 thus processed is prepared.

In the heat treatment apparatus according to the present embodiment, twoblackbodies 4 are used as a pair, in order to measure simultaneously twopositions, one of which is near the center of the mask blank 1 and neara end portion of the mask blank 1. The temperatures of the black bodies4 are maintained to be constant such that stable constant heat isradiated from the black body 4. The radiation rates of the black bodies4 and the photosensitive thin film on the substrate 1 are previouslymeasured. Since these blackbodies 4 are provided at positionsmirror-symmetrical to the radiation thermometers 5, the radiation amountas a sum of the radiation amount from the surface of the mask blank 1and the constant radiation amount from the blackbody 4 can be receivedby the radiation thermometer 5 while eliminating infrared noise from thedirection from the mirror-symmetric position of the radiationthermometer 5. Further, a constant light receiving amount (radiationamount) from the blackbody 4 is subtracted from the received radiationamount thus summed, the radiation amount from the surface of the maskblank 1 can be detected with high preciseness. The blackbodies 4 areprovided as shown in FIGS. 1A and 1B.

Next, the temperature of the blackbody 4 is set to 100° C. After thetemperature of the blackbody 4 is stabled sufficiently, the blackbody 4is positioned by a positioning unit. Thereafter, the mask blank 1 istransferred by the transfer arm 8 and positioned. At the same time, thestraightening plate 9 is arranged at an optimized position (at aposition by 5 mm above the mask blank 1). The temperature controlsection 3 is triggered such that temperature measurement by theradiation thermometer 5 is started at the instance when the mask blank 1is set on the sample table 2. At this time, the measurement wavelengthof the radiation thermometer 5 is set to 9 to 14 μm.

The transmittance of the photomask blank 1 with a resist with respect toinfrared light is substantially 0 where the wavelength is within a rangeof approximately 2.7 to 2.8 μm and a range of approximately 4.3 μm ormore, as shown in FIG. 2. Therefore, measurement of the temperature ofthe substrate surface (the surface of the photosensitive material filmon the substrate) in a quartz substrate on which a photosensitivematerial film is formed is enabled by selecting the wavelength ranges.Also, the radiation rate of the quartz becomes small within thewavelength range of 8 to 9 μm, as shown in FIG. 3. Hence, the range of 9to 14 μm in the side of longer wavelength is used for temperaturemeasurement by means of radiation thermometers 5, to avoid influencestherefrom on measurement.

The mask blank 1 with a resist is set on the sample table 2 havingheaters, and measurement is started. The temperature of the mask blank 1rises, and the input powers to the heaters 2 a and 2 b are continuouslycontrolled by a PID system until the temperature of the surface at themask blank 1 is finally stabled at a predetermined temperature. FIG. 4Ashows the temperature histories at the center portion P1 and peripheralportion P2 as measurement positions shown in FIG. 1A. The temperature ofthe surface of the mask blank 1 is stabled at 100° C. after about 360seconds. The temperature histories at the center portion P1 and theperipheral portion P2 of the mask blank 1 are substantially equal toeach other.

The temperature control section 3 determines the powers applied to theheaters 2 a and 2 b in response to the temperatures instructed by theradiation thermometers 5 and are feedback to the heaters 2 a. and 2 b.Also, the temperature control section 3 continuously calculates andrecords the integrated value of the energy amount, in order that heatingcan be stopped when the energy amount calculated by integration of thesurface temperature of the mask blank 1 with respect to the heattreatment time reaches a preset value.

In the present embodiment, the surface temperature of the mask blank(substrate to be processed) 1 becomes constant at a preset temperature,and heating is further continued for 120 seconds and then stopped. Thetotal baking time was 480 seconds. Thereafter, the pins 7 and thestraightening plate 9 are elevated up, and thereafter, the mask blank 1and the heaters 2 a and 2 b are isolated from each other. Further,positioning of the mask blank 1 is carried out, and thereafter, the maskblank 1 is moved onto the cooling plate 12.

Next, the step of cooling the mask blank (substrate to be processed) 1will be explained below. The temperature adjust unit 11 shown in FIG. 1Bserves to adjust the temperature and flow rate of a gas used for coolingthe mask blank 1. This temperature adjust unit 11 adjusts thetemperature and flow rate of the gas in correspondence with the positionof the mask blank 1, in accordance with an instruction from thetemperature control section 3, and lets the gas flow from above the maskblank 1. Cooling of the mask blank 1 is carried out by making a gas(e.g., pure-N₂) whose temperature is adjusted flow from above the maskblank 1 and uniformly spraying the gas onto the entire surface of themask blank 1.

At first, the straightening plate 9 is arranged at an optimized position(which is 5 mm above the mask blank 1) after completion of setting ofthe mask blank 1. The temperature of the blackbodies 4 is set to 70° C.Further, the blackbodies 4 and the radiation thermometers 5 are moved bya stage, and are arranged at optically mirror-symmetrical positions withrespect to the surface of the mask blank 1. In this manner, theradiation thermometers 5 are arranged at positions where arbitrarymeasurement positions on the surface of the mask blank 1 can bemonitored. Further, cooling of the mask blank 1 is started, andtemperature measurement is started by the radiation thermometers 5.

After starting the cooling, temperature measurement is carried out attwo positions at the center portion P1 and peripheral portion P2 of themask blank 1, for every second. The temperature control section 3determines such a temperature of the gas that equalizes the temperaturesat the center portion P1 and the peripheral portion P2 and cools themask blank most rapidly. The temperature adjust unit 11 adjusts the gasto the determined temperature and makes it flow, in accordance with aninstruction from the temperature control section 3. FIG. 4B shows thehistories of the temperatures at the center portion P1 and theperipheral portion P2 of the mask blank 1 in this cooling step. As aresult of measuring after 30 seconds from the starting of the cooling,the temperature of the center portion P1 of the mask blank 1 was 70.0°C.

The temperature control section 3 determines the temperature of the gasin response to the temperatures instructed by the radiation thermometers5, and issues an instruction to the temperature adjust unit 11. The gastemperature instructed at this time by the temperature control section 3was 4.0° C. at the center portion of the mask blank 1 and was 9.6° C. atthe peripheral portion of the mask blank 1. Cooling of the mask blank 1was continued on the cooling plate until a room temperature is obtained.From FIG. 4B, it is found that the temperature difference between thecenter portion P1 and the peripheral portion P2 of the photosensitivethin film on the mask blank 1 is within a very small range (about 0.2°C.).

After completion of the cooling, the resist of the mask blank 1 issubjected to dip-development, to dry-etch chrome. After peeling theresist, the mask blank 1 is washed. Thus, manufacture of a photomask iscompleted. Thereafter, in-plane uniformity of the dimensions ofline/space patterns formed in the surface of the photomask was evaluatedby SEM. As a result, there was no substantial difference from designeddimensions but patterns with very high preciseness could be obtained.

Thus, in the present embodiment, temperature measurement of non-contacttype using blackbodies and radiation thermometers is adapted in the stepof preparing a photomask used in steps of manufacturing a semiconductordevice. According to a conventional method, in a system in which themask blank is heated from downside, it is very difficult to manage thetemperature of the resist film on the quartz substrate since athermocouple and a resistance bulb used for performing temperaturecontrol are embedded near the surface of the heat plat. The heatcapacity of the quartz substrate is very large and the heat conductivitythereof is very low, so the history of temperature increase differsbetween the center portion and the peripheral portion of the substrate.A problem has hence arisen in that the pattern dimensions differ in onesame plane of the substrate.

In contrast, according to the present embodiment, the wavelength to bemeasured by the radiation thermometers 5 of non-contact type is limited(to 9 to 14 μm in the case of the present embodiment) in measurement ofthe temperature of the photo resist film existing on the mask blank, andblackbodies 4 are arranged at positions mirror-symmetrical to thepositions of the radiatian thermometers 5 with respect to the photoresist film, based on the mirror characteristic of the photo resistfilm. The radiation thermometer therefore receives two radiation lights,i.e., radiation light from the surface (the photosensitive thin film andthe thin film containing metal) of the substrate to be processed andradiation light which comes from the black body and is reflected on thesurface of the substrate. By previously measuring radiation rates of theblack body and the photosensitive thin film on the substrate to beprocessed, it is possible to know the radiation amount which enters intothe radiation thermometer from the black body. Therefore, as for theradiation from the surface of the substrate, mixture of stray light canbe efficiently prevented if the radiation amount which comes from theblack body and is reflected on the surface of the substrate issubtracted from the radiation amount which is actually received by theradiation thermometer. As a result, stray light entering into thethermometers 5 can be shielded, and the temperature of the photo resistfilm can be measured with very high preciseness of an range of ±0.2degrees.

Further, the substrate surface temperature above the heater 2 a providednear the center of the substrate differs from the substrate surfacetemperature above heater 2 b provided near an end portion of thesubstrate. With respect to the problem that the heat history differs inthe plane of this substrate, feedback control is effected by the controlsection so as to equalize both temperatures, and an instruction isgenerated so as to increase the output of the heater 2 b. As a result,the total decomposition reaction amount of the dissolution inhibitinggroup in the resist during the heating processing becomes substantiallyequal between the portion near the center and the portion near the endportion. In this manner, significant improvements ware made inconcentrically circular distribution of dimensions which is consideredto be caused by concentrically circular distribution of heats. Note that3σ=10 nm was achieved in case of a substrate of 130-mm square having adiameter of 6 inches and a thickness of 0.25 inches (according tostandard 6025).

Also, the total energy amount applied to the substrate during heatingcan be controlled strictly. Therefore, controllability of absolutedimensions in the substrate was greatly improved. Where ten masks wereexperimentally prepared by similar processing according to the presentembodiment, all differences (mean-target) from designed dimensions couldbe controlled within a range of ±10 nm. From the reasons describedabove, a photomask with high preciseness can be manufactured by thepresent embodiment.

In the present embodiment, the temperature can be measured with highpreciseness over a wide range by providing a plurality of blackbodies.However, it is possible to substitute the blackbodies with one singleblackbody. Although the present embodiment uses blackbodies and aradiation thermometer to maintain measurement preciseness of thetemperature in the plane of the substrate, the temperature distributionover the entire surface of the substrate can be measured with one singleblackbody 4 and one single radiation thermometer 5 by appropriatelyselecting the sizes of the blackbody 4 and the radiation thermometer 5and the layout thereof (incidence angles to then substrate).

In addition, feedback to the divided heaters 2 a and 2 b can beachieved, by determining representative positional coordinates withrespect to the area monitored by the radiation thermometer 5, byinputting the representative positional coordinates and the temperaturethereof to the temperature control section 3, and by further adjustingthe relationship between the representative coordinates and thepositions of the heaters. FIG. 5A is a plan view of the substrate to beprocessed based on the radiation thermometer 5, and the mark× in thefigure indicates representative coordinates.

Also, in the present embodiment, an infrared beam used for temperaturemeasurement is mirror-reflected by a flat substrate. Therefore, straylight needs only be shielded with respect to the size determined byconsidering only the mirror reflection from the substrate surface.However, in case of a substrate which already includes a pattern and thelike and which causes irregular reflection, a structure using a muchlarger blackbody 4 a is more effective, as shown in FIG. 5C.

In the present embodiment, the temperature control of a medium in thecooling step has been described. However, needless to say, similartemperature control can be made in the heating step. In addition, themedium used for temperature control is not limited to nitrogen, butanother inactive gas such as Ar, Ne, He, or the like can be used. Also,the medium is not limited to a gas but a liquid such as water orfluorinate may be used.

[Second Embodiment]

FIG. 6 is a side view schematically showing the structure of a heattreatment apparatus according to the second embodiment of the presentinvention. Note that the same portions as those in FIG. 1 are denoted atsame reference symbols and detailed explanation thereof will be omittedherefrom.

In the present heat treatment apparatus, no heater is provided for thesample table 22, and a halogen lamp is provided as a heating source ofthe substrate 1 to be processed in the back surface side of thesubstrate (i.e., in the side of the surface opposite to the surfacewhere a target film is formed). Used herein is a halogen lamp 26 havinga peak wavelength of about 1.1 μm. Other respects of the structure,including the temperature control section 3, blackbody 4, radiationthermometer 5, transfer arm 8, straightening plate 9, and the like aresubstantially the same as those in the first embodiment.

At first, a positive chemical amplification resist (having a photoresist film thickness of 500 nm) is applied onto a photomask blank of 6inches as the substrate 1 to be processed. Further, this mask blank isexposed with light by an electronic beam drawing device (50 keV, 15μC/cm²). A mask blank 1 thus processed is prepared.

Next, heating is performed on the mask blank 1 (substrate to beprocessed) 1. This heating processing means PEB processing of the masksubstrate which is carried out after drawing.

As shown in FIG. 6, a halogen lamp 26 is provided below the substrate tobe processed 1. Above the substrate 1, one blackbody 4 and one radiationthermometer 5 are provided so as to make a positional mirrorrelationship with each other with respect to the surface of thesubstrate 1. The temperature of the are 1 blackbody 4 is set to 100° C.and is stabled at this temperature. In this while, alignment is carriedout with respect to the positions of the straightening plate 9,blackbody 4, and radiation temperature 5. These positions are adjustedby a stage which can be adjusted in the directions of X, Y, Z, θ, and φ,such that the measurement sensitivity is maximized. After thetemperature of the blackbody 4 is stabled, the substrate 1 is set on thesample table 22 by the transfer arm 8.

The halogen lamp 26 is turned on and heating of the substrate 1 isstarted. At the same time, measurement of the temperature is started bythe radiation thermometer 5. The measurement wavelength of the radiationthermometer 5 is set to 9 to 14 μm with which radiation from quarts andradiation front the halogen lamp 26 are cut by the chrome layer as ashielding film. This is performed in order to improve the SN ratio asmuch as possible although the peak wavelength of the halogen lamp 26 is1.1 μm and the halogen lamp 26 does not substantially radiate lighthaving a wavelength of 9 to 14 μm. FIG. 7 shows a situation in which thesubstrate 1 is heated and the temperature of the center portion P1 ofthe substrate 1 increases.

In this manner, ten seconds after, the surfare temperature of thesubstrate 1 reached 100° C. as the set temperature. Thereafter, thevoltage applied to the lamp 26 is controlled such that the surfacetemperature of the substrate 1 to be processed is maintained at 100° C.by the temperature control section 3, and heating is performed for thetime for which energy is applied by the energy threshold valuecalculated by integration, of the preset substrate surface temperaturewith respect to the heat treatment time, i.e., heating is performed for60 seconds. Thereafter, the power of the lamp 26 is turned off to stopheating. Several seconds after, the surface temperature of the quartzsubstrate 1 returns to the temperature at which a decomposition reactionof the dissolution inhibiting group is not caused by PM of the chemicalamplification resist. Therefore, cooling control processing wasdetermined as being unnecessary for the substrate 1 to be processed, andwas therefore not carried out.

Thereafter, the resist on the substrate 1 to be processed was subjectedto dip-development, and dry etching was performed on chrome. Thus,manufacture of a photomask was terminated. Thereafter, in-planeuniformity of dimensions of line/space patterns formed in the plane ofthe photomask was evaluated by dimension SEM. As a result, there were nosubstantial differences from designed dimensions, so patterns could beobtained with very high preciseness.

Thus, according to the present embodiment, blackbody radiation andtemperature measurement using a radiation thermometer are applied to astep of preparing a photomask used in a step of manufacturing asemiconductor device. According to a conventional method, radiationlight directly used for heating, radiation light from quartz, and straylight existing in the direction toward the mirror image with respect tothe temperature measurement position on the photo resist film becomemeasurement noise when measuring the temperature of the photo resistfilm in case where a lamp (radiation) is used as a heating means.

In contrast, according to the present embodiment, the radiationthermometer 5 does not detect radiation light from radiation sourcesexisting in the side opposite to the shielding film (chrome film) layersince the temperature monitor wavelength of the radiation thermometer 5is set at 9 to 14 μm. Therefore, the temperature of the photo resistfilm can be measured with high preciseness by the radiation thermometer5.

In addition, the surface of the photo resist film has very high flatnessand therefore has a mirror characteristic. Therefore, there is provideda mechanism (which is the blackbody 4 having a constant temperature inthe present embodiment) which removes stray light in the direction inwhich the position of the mirror image of the radiation thermometer 5exists, with respect to the temperature measurement positions asreference positions. The radiation thermometer therefore receives tworadiation lights, i.e., radiation light from the surface (thephotosensitive thin film and the thin film containing metal) of thesubstrate to be processed and radiation light which comes from the blackbody and is reflected on the surface of the substrate. By previouslymeasuring radiation rates of the black body and the photosensitive thinfilm on the substrate to be processed, it is possible to know theradiation amount which enters into the radiation thermometer from theblack body. Therefore, as for the radiation from the surface of thesubstrate, mixture of stray light can be efficiently prevented if theradiation amount which comes from the black body and is reflected on thesurface of the substrate is subtracted from the radiation amount whichis actually received by the radiation thermometer. As a result, mixtureof the stray light into the radiation thermometer 5 can be preventedefficiently, and the temperature of the photo resist film can bemeasured with high preciseness by the radiation thermometer 5.

Also, in infrared heating with use of a halogen lamp, the temperatureincrease of the quartz substrate can be greatly reduced. Therefore, thestep of cooling the substrate 1 can be removed depending on theprocessing time. Accordingly, it is possible to improve greatly theproblem that the dimensions reflect the temperature distribution duringbaking due to the size of heat capacity of the quartz substrate and thelow heat conductivity in case of using a heating means based on aconventional heater. Further, the surface temperature can be monitoredwith very high preciseness, by using the temperature measurement methodaccording to the method described in the present embodiment in which theblackbody 4 and the radiation thermometer 5 are combined with eachother. As a result of this, the dimension controlability in the PEB stepcan be remarkably improved, and the concentrically circular distributionof dimensions which is considered as being caused by the temperaturedistribution in the plane of the mask during the PEB can be improvedgreatly. 3σ=11 nm was achieved with a substrate of 1.30-mm squareaccording to the standard 6025.

Also, the total energy amount applied to the substrate during heatingcan be controlled strictly. Therefore, the controllability of theabsolute dimensions in the plane of the substrate was improvedremarkably. Where ten masks were experimentally prepared by similarprocessing in the present embodiment, differences (mean-target) fromdesigned dimensions were all controlled within ±10 nm. From the reasonsdescribed above, a photomask with very high preciseness can bemanufactured according to the present embodiment.

In the present-embodiment, noise light which enters into the radiationthermometer 5 is shielded and removed by using the mirror layout of theblackbody 4 and infrared characteristics of the photomask blank. Takeninto consideration that the response speed of the radiation thermometer5 is about 0.5 seconds, the temperature management can be performed bymaking correction in a software-based manner in which, for example, thetemperature is measured immediately after turning off or decreasing thepower applied to the lamp 26 and an offset value is then added, etc.That is, the infrared light noise is more reduced and measurement isperformed by reducing the power applied to the infrared lamp 26 to zeroor a very small value at the instance of temperature measurement.

[Third Embodiment]

FIG. 8 is a side view showing the schematic structure of a heattreatment apparatus according to the third embodiment of the presentinvention. Note that the same portions as those in FIG. 1 are denoted atsame reference symbols and detailed explanation thereof will be omittedherefrom.

In the present treatment apparatus, the sample table 32 is not providedwith a heater and a halogen lamp 36 is provided as a heating source forthe substrate 1 to be processed, in the surface side (the surface sidewhere a film as a target is formed) of the substrate. Used herein is ahalogen lamp 36 having a peak wavelength of about 1.1 μm. Further, ashielding plate 39 is provided between the substrate 1 to be processedand the lamp 36. This shielding plate 39 serves to shield infrared beamsat the rising (preheating) and trailing (end of heating) of the heatingof the lamp. The other respects of the structure including thetemperature control section 3, blackbody 4, radiation thermometer 5,pins 7, transfer arm 8, and the like are substantially the same as thoseof the first embodiment.

At first, a positive chemical amplification resist (having a photoresist film thickness of 500 nm) is applied onto a photomask blank of 6inches as the substrate 1 to be processed. Further, this mask blank isexposed with light by an electronic beam drawing device (50 keV, 5μC/cm²). A mask blank 1 thus processed is prepared.

Next, heating processing is performed on the mask blank 1 (substrate tobe processed) 1. This heating processing means PEB processing of themask substrate which is carried out after drawing.

As shown in FIG. 8, a halogen lamp 36 is provided above the substrate tobe processed 1. Also above the substrate 1, one blackbody 4 and oneradiation thermometer 5 are provided so as to make a mirror positionalrelationship with each other with respect to the surface of thesubstrate 1, as shown in FIG. 8. The temperature of the blackbody 4 isset to 100° C. and is also stabled at this temperature. In this while,alignment is carried out with respect to the positions of the blackbody4 and the radiation temperature 5. These positions are adjusted by astage which can be adjusted in the directions of X, Y, Z, θ, and φ, suchthat the measurement sensitivity is maximized. After the temperature ofthe blackbody 4 is stabled, the substrate 1 is set on the sample table32 by the transfer arm 8.

The halogen lamp 36 is turned on and heating of the substrate 1 isstarted. At the same time, measurement of the temperature is started bythe radiation thermometer 5. At this time, rectangular wave modulationat a frequency of 1 Hz with the maximum applied power of 600 W and theminimum applied power of 20 W is applied to the power applied to thelamp 36. Further, the temperature control section 3 is triggered suchthat the monitoring cycle of the radiation thermometer 5 is synchronizedwith the modulation frequency. Measurement by the radiation temperature5 is set so as to be carried out when the power applied to the lamp 36is minimum (20 W). The measurement wavelength of the radiationthermometers 5 is set to 9 to 14 μm like in the first and secondembodiments.

Rectangular wave modulation is thus applied to the lamp power regardlessof the measurement wavelength of the temperature set to 9 to 14 μm. Thisis because the photo resist film and the chrome film have a very smallradiation rate of about 0.2 to 0.25 so that the radiation intensity isvery weak, and the SN ratio must be improved. FIG. 9 shows the processin which the substrate 1 to be processed is heated and the temperatureincreases. The curve of the temperature is indicated by a notched linebecause temperature measurement was carried out in synchronization withthe modulation frequency.

In this manner, thirty seconds after, the surface temperature of thesubstrate 1 reached 100° C. as the set temperature. Thereafter, thevoltage applied to the lamp 36 is controlled such that the surfacetemperature of the substrate 1 to be processed is maintained at 100° C.by the temperature control section 3, and heating is performed forfurther 60 seconds from the energy threshold value set by thetemperature control section 3. Thereafter, the power of the lamp 36 isturned off to stop heating. Since the quartz substrate does not almostwarm yet, the surface temperature of the quartz substrate 1 returns tothe temperature at which a decomposition reaction of the dissolutioninhibiting group is not caused by PEB of the chemical amplificationresist, in several seconds after the instance when the voltage of thelamp 36 is decreased. Therefore, cooling control processing wasdetermined as being unnecessary for the substrate 1 to be processed, andwas therefore not carried out particularly.

Thereafter, the resist on the substrate 1 to be processed is subjectedto dip-development, and dry etching is performed on chrome. Thus,manufacture of a photomask was completed. Thereafter, in-planeuniformity of dimensions of line/space patterns formed in the plane ofthe photomask was evaluated by dimension SEM. As a result, there were nosubstantial differences from designed dimensions, so patterns could beobtained with very high preciseness.

Thus, according to the present embodiment, temperature, blackbodyradiation and temperature measurement using a radiation thermometer areapplied to a step of preparing a photomask used in a step ofmanufacturing a semiconductor device. According to a conventionalmethod, in case where a lamp (radiating section) is used as a heatingmeans and the lamp is provided above the quartz substrate, it isconsidered that radiation noise to the radiation thermometer may occur.

In contrast, according to the present embodiment, radiation noise can bereduced by removing or reducing radiation due to heating only duringtemperature measurement, so that accurate temperature measurement isenabled. In addition, if the peak wavelength of the halogen lamp 36 isset to a near-infrared-radiation range, the light of 9 to 14 μm used asthe measurement wavelength in the present embodiment is very small.Therefore, if modulation is not effected on the radiation, temperaturemeasurement can be achieved in some cases. Accordingly, the surfacetemperature can be monitored with very high preciseness, by using thetemperature measurement method according to the method described in thepresent embodiment in which the black body 4 and the radiationthermometer 5 are combined with each other. As a result of this, thedimension controlability in the PER step can be remarkably improved, andthe concentrically circular distribution of dimensions which isconsidered as being caused by the temperature distribution in the planeof the mask during the PEB can be improved greatly. 3σ=11 nm wasachieved with a substrate of 130-mm square according to the standard6025.

Also, the total energy amount applied to the substrate during heatingcan be controlled strictly. Therefore, the controllability of theabsolute dimensions in the plane of the substrate was improvedremarkably. Where ten masks were experimentally prepared by similarprocessing in the present embodiment, differences (mean-target) fromdesigned dimensions were all controlled within ±10 nm. From the reasonsdescribed above, a photomask with very high preciseness can bemanufactured according to the present embodiment.

[Fourth Embodiment]

FIG. 10B is a side view showing the schematic structure of a heattreatment apparatus according to the fourth embodiment of the presentinvention. Note that the same portions as those in FIG. 1 are denoted atsame reference symbols and detailed explanation thereof will be omittedherefrom.

The present treatment apparatus is constructed by adding the followingtwo equipments or measures to the apparatus shown in the firstembodiment. As shown in FIGS. 10A and 10B, a reference sample 41 is seton a heater 42. There reference sample 41 is a substrate to be processedfor correcting the temperature of the radiation thermometer 5 and alsois a chrome mask blank with a resist, which has the same radiation rateas the substrate 1 to be processed, shown in the figure. The heater 42heats the reference sample 41 under control by the temperature controlsection 3.

As for the reference sample 41, a thermocouple is embedded in the chromefilm so that the temperature near its surface can be measured. A leadline from the thermocouple is processed so as not to be exposed from thesurface. The power applied to the heater 42 is controlled by thetemperature control section 3 so that the temperature of thethermocouple is continuously maintained at a temperature at which themask blank after exposure is subjected to PEB. In this case, thetemperature is set to 100° C.

It is most preferable that the reference sample 41 has the samestructure as the substrate 1 to be processed, i.e., a chrome film isformed on the quartz substrate and a photo resist film is appliedthereon. However, the reference sample 41 is not limited hitherto aslong as the reference sample has a structure substantially equal to thatof the substrate 1 and provides a radiation rate substantially equal tothat of the substrate 1. For example, only polymer as a main componentof the resist may be formed in place of the photo resist film.

Before the mask blank after exposure is subjected to PEB in the firstembodiment, the method described below is used to correct themeasurement error (which particularly has a long cycle (drifting of thesensitivity)) caused by the radiation thermometer (infrared sensor) 5.Before the substrate 1 to be processed is subjected to a heat treatment,the temperature of the reference sample 41 is firstly set to a constanttemperature (100° C.). Further, the infrared sensor 5 and acorresponding blackbody 4, which are used for actually measuring thetemperature of the surface of the substrate 1, are moved to points atwhich the temperature at one point on the reference sample 41 can bemeasured, with use of a movable stage. At this time, the thermocoupleindicates a temperature of 100.0° C., and the infrared sensor 5indicates a temperature of 100.0° C., where the radiation rate of theresist is ε=0.25. Thereafter, in order to be processed which has beenexposed with an electron beam, the infrared sensor 5 and the blackbody 4are returned to positions at which the temperature of the substrate 1 tobe processed on the sample table 2 can be measured to perform a heattreatment on the substrate 1.

Subsequently, the substrate 1 to be processed is transferred and mountedonto the sample table 1 by the transfer arm 8. At the same time, thestraitening plate 9 is arranged at an optimized position (5 mm above thesubstrate). Further, heating processing and cooling processing areperformed on the substrate 1 to be processed, like in the firstembodiment.

One hour after the heat treatment, if it is necessary that another maskblank after exposure should be subjected to PEB, the following method isused. Before the substrate 1 to be processed is subjected to a heattreatment, the temperature of the reference sample 41 is set to aconstant temperature (100° C.). Further, the infrared sensor 5 and thecorresponding blackbody 4 are moved again to points at which thetemperature at one point on the reference sample 41 can be measured,with use of the movable stage, and measurement is carried out. At thistime, the thermocouple of the reference sample 41 indicates atemperature of 100.0° C., and the infrared sensor 5 indicates atemperature of 102.4° C., where the radiation rate of the resist isε=0.25.

Although the measurement temperatures of the reference sample 41indicated by the thermocouple for the first and second times are equalto each other, the temperature indicated by the infrared sensor 5 differfrom each other. In this case, this error is considered to be caused bysensitivity drifting of the infrared sensor 5 and the gain of theinfrared sensor 5 is adjusted so that the output of 102.4° C. becomes100° C. Subsequently, the infrared sensor 5 and the correspondingblackbody 4 are returned to positions where temperature measurement ofthe substrate 1 after exposure can be carried out. Further, a heattreatment is performed on the substrate 1 to be processed, on the sampletable 2, and thereafter, cooling processing is performed thereon.

The resist on the substrate which was first subjected to a heattreatment is subjected to dip-development, and dry etching is performedon chrome. After peeling the resist, the substrate is washed. Likewise,the resist on the substrate which was second subjected to a heattreatment is subjected to dip-development, and dry etching is performedon chrome. After peeling the resist, the substrate is washed. Thus,manufacture of first and second photomasks are is completed. Thereafter,in-plane uniformity of the dimensions of line/space patterns formed inthe surface of each photomask was evaluated by SEM. As a result, therewas no substantial differences from designed dimensions with respect toboth the first and second photomasks, but patterns with very highpreciseness could be obtained.

Thus, according to the present embodiment, the temperature of thereference sample 41 is measured with use of a blackbody and a radiationthermometer 5 which are used for measurement, before the substrate 1 tobe processed is subjected to heating processing. After temperaturecorrection is then made to the radiation thermometer 5, the temperatureof the substrate 1 is measured. In this manner, most of influences fromthe temperature drifting of the radiation thermometer 5 can besuccessfully eliminated. As a result of this, the dimensioncontrollability during PEB is remarkably improved, and a plurality ofphotomasks could be experimentally manufactured with very highpreciseness so that the dimension errors between the samples each otherwere within a range of ±4 nm.

Note that the present invention is not limited to the embodimentsdescribed above. The transparent substrate which forms the mask blank asthe substrate to be processed is not limited to quartz as long as thesubstrate transmits light used for exposure. Likewise, the thin filmcontain metal as the mask blank is not limited to chrome as long as thefilm is a shielding film which shields light used for exposure. Further,the photosensitive thin film is not limited to the chemicalamplification type resist but may be appropriately changed in accordancewith specifications. In addition, the substrate to be processed is notlimited to the mask blank but any substrate is applicable as long as aphotosensitive thin film is formed on the substrate.

The measurement wavelength in the radiation thermometer is not limitedto 9 to 13 μm as long as the measurement wavelength is within a range of2.7 to 2.8 μm or 4.3 μm or more. However, in order to avoid securelyreflection in case of quartz and influences from moisture absorptionspectrums, the wavelength is desirably 9 to 14 μm or more. In addition,the present invention can be variously modified and practiced withoutdeviating from the scope of the invention.

As has been specifically described, according to the present invention,the measurement wavelength of the radiation thermometer is set within arange of 2.7 to 2.8 μm or at 4.3 or mores when the temperature of thesurface of the substrate to be processed is measured in a non-contactmanner by a radiation thermometer, in a heat treatment method and a heattreatment apparatus by which the substrate to be processed such as asubstrate for exposure on which a photosensitive thin film is formed isheated to a desired temperature. Also, there is provided a mechanism forshielding stray light in the direction toward a mirror image of theradiation thermometer with respect to the temperature measurementposition on the photosensitive film. In this manner, it is possible toprevent measurement errors from being caused by other radiated lightthan that from the object to be measured, and it is possible to measureaccurately the surface temperature of the substrate to be processed.Further, temperature measurement is carried out while monitoring thesurface temperature of the actual substrate to be processed (in-situ),and the measurement results can be instantaneously feedback to theheating control section. Thus, accurate temperature management of thesubstrate to be processed is enabled.

Also, before the heating processing on the substrate to be processed,the temperature of a reference sample, which is made of the samematerial as the substrate to be processed and set to a desiredtemperature, is measured by a radiation thermometer or a thermocouplefor temperature correct on embedded in a reference sample. Based on thedata obtained from the measurement, correction is made to themeasurement value of the radiation thermometer. As a result of this,influences from drifting of the radiation thermometer are eliminated, sothat dimension errors among a plurality of substrates to be processedcan reduced to be very small.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

What is claimed is:
 1. A heat treatment apparatus comprising: a supportmember for supporting a substrate to be processed, wherein a thin filmis formed on the substrate; a heating section for heating the thin film;a radiation thermometer for measuring a surface temperature of the thinfilm, the radiation thermometer being disposed above the thin film onthe substrate; and a control section for controlling a temperature whichis altered by the heating section, in response to the temperaturemeasured by the radiation thermometer; wherein a wavelength of lightmeasured by the radiation thermometer is set to a wavelength rangeexcept for a wavelength range of light which is transmitted through thethin film.
 2. An apparatus according to claim 1, further comprising ablackbody for cutting off noise light which is reflected by the thinfilm and enters into the radiation thermometer.
 3. A heat treatmentapparatus comprising: a support member for supporting a substrate to beprocessed, wherein a thin film is formed on the substrate; a heatingsection for heating the thin film; a radiation thermometer for measuringa surface temperature of the thin film; a blackbody for cutting offnoise light which is reflected by the thin film and enters into theradiation thermometer; and a control section for controlling atemperature which is altered by the heating section, in response to thetemperature measured by the radiation thermometer; wherein the blackbodyis disposed at a position optically symmetrical to the radiationthermometer, with respect to a surface of the thin film.
 4. An apparatusaccording to claim 1, further comprising: a reference sample which ismade of same material as the substrate and is set at a targettemperature; and a correcting section for measuring a surfacetemperature of the reference sample, and for correcting a measurementvalue of the radiation thermometer, based on temperature data obtainedby measurement of the surface temperature of the reference sample.
 5. Anapparatus according to claim 1, further comprising a straightening platewhich is provided above the substate to be processed and prevents adisturbed flow from occuring in an atmosphere above and near thesubstrate.
 6. A heat treatment apparatus comprising: a support memberfor supporting a substrate to be processed, wherein a thin film isformed on the substrate; a heating section for heating the thin film; aradiation thermometer for measuring a surface temperature of the thinfilm; and a control section for controlling a temperature which isaltered by the heating section, in response to the temperature measuredby the radiation thermometer; wherein a thin metal film is formed on thesubstrate to be processed, and the thin film is formed on the thin metalfilm.
 7. An apparatus according to claim 6, wherein the substrate isquartz, and the wavelength range of the light measured by the radiationthermometer is set to one of a range of 2.7 to 2.8 μm and a range of 4.3μm or more.
 8. An apparatus according to claim 7, wherein the the thinfilm is a photosensitive thin film.
 9. An apparatus according to claim1, wherein the radiation thermometer is an infrared sensor.
 10. Anapparatus according to claim 3, wherein the radiation thermometer is aninfrared sensor.
 11. An apparatus according to claim 6, wherein theradiation thermometer is an infrared sensor.